A-Atomic 2 series

A-Atomic 2 series
Design concepts

As the demands of manufacturing processes continue to rise, atomic-level processing equipment has become an essential tool. However, the price barrier of such equipment should not hinder the progress of science. Following in the footsteps of your dreams, Atomic Refining has overcome cost and space constraints, making the A-Atomic series of atomic layer deposition equipment accessible to every laboratory. While the A-Atomic series is priced very reasonably, it does not compromise on functionality. Adhering to the principles of atomic layer deposition system design, it assists users in accomplishing their tasks.

What's remarkable is that the A-Atomic series can execute advanced processes such as Thermal-ALD, PEALD, PEALE, and ALA, among others. Developed specifically for academic research institutions and research units, it offers a product positioning that is user-friendly, stable, and highly reproducible. Paired with the exclusive AtomicPrecision-Library, the A-Atomic series will become your ultimate research partner.

Technical Specifications and Pricing

A2 Specifications and price

Precursor delivery module, easy to maintain and expand; accommodates up to 4 sets of precursors

Special patented high-density plasma source

Std. A2 PEALD*3 & 4 lines Precursor A2 PEALD*2
Total width= 205 cm

Clean, cost-effective, and efficient precursor delivery

Independent Channels

Each precursor has its own independent channel with fast valves, mass-flow controllers, and piping to prevent cross-contamination and piping blockages, ensuring precise dosing.

Universal Gas Manifold

The gas manifold design is versatile and can accommodate both high vapor pressure Type I and low vapor pressure Type Y precursor containers, allowing for pipeline configuration adjustments to meet different process requirements.

Rapid Response

By reducing the total gas pipeline length and minimizing residue within the pipeline during a half cycle, the system prevents residual precursors from undergoing CVD reactions. This design also enhances the pressure response rate within the reaction chamber during gas introduction.

Ultra-fast Diaphragm Valve

Long cycle life under high-speed actuation
Quick response capable of valve opening or closing time of less than 5 ms Thermal model extends actuator life for thermal application
Cobalt alloy diaphragm to provide high strength and corrosion resistance to ensure long cycle life
High-purity grade PFA seat with broad range of chemical compatibility
Cv consistency from valve to valve: ±3%
Contained seat to provide excellent resistance to swelling & contamination
Minimum particle generation and dead space facilitate purging
Suitable for ultra high purity applications

Stable and Reliable Optional Precursor Modules

Temperature-Controlled Reservoir Module

Improved stability in precursor delivery
No vapor pressure variations due to liquid level fluctuations

Liquid Level Sensing Module

Provides a more intuitive and real-time understanding of the remaining liquid volume

Pressure Gauge Module

Allows for a more intuitive and real-time understanding of the vapor pressure

Remote Plasma Source

For high-quality thin film applications such as passivation layers, gate dielectrics, and insulators, the A2 series offers the option to upgrade from the standard ICP (Inductively Coupled Plasma) source to the HCD (Hollow-Cathode Discharge) module, which provides higher free radical concentrations, faster film deposition, and fewer film defects. Taking the example of an Al2O3 standard film layer, the film quality achieved through this HCD technology surpasses that of the ICP method. XPS (X-ray Photoelectron Spectroscopy) analysis reveals a significant reduction in non-lattice oxygen composition. This leads to advantages such as reduced leakage current and enhanced LED efficiency. In process results for GPC (Gas Phase Cleaning), U% (Uniformity Percentage), and MSE (Material Selectivity Efficiency), the HCD module outperforms the ICP. It is evident that the HCD module can supply oxygen radicals for an 8-inch area, making it fully capable of handling the 2-inch area of the A2 series.

High-Temperature Precursor Solution

Through a high-temperature dual-valve quantitative module, the application temperature of the precursor can be raised from 200°C to 300°C and even up to 600°C, while achieving precise precursor quantification. The concept involves opening V1 to fill the space between the valves with precursor vapor, then closing V1, and subsequently opening V2 to allow all the precursor vapor within the space to flow into the reaction chamber. This method enables accurate quantification of the precursor introduced into the reaction chamber and surpasses the 200°C threshold that most brands' rapid valves cannot exceed.

Diverse Film Layer Combinations

With up to four precursor modules, you can easily address various film engineering requirements such as regular, super-cycles, co-dosing, etc. For example, in the development of HEMT (High Electron Mobility Transistor), you can use multiple precursors like TMAl, TMGa/TEGa, N2H4, BDEAS to stack film layers like AlN, GaN, AlGaN, SiN, and more.

Rouf, Polla, et al. "Epitaxial GaN using Ga (NMe2)3 and NH3 plasma by atomic layer deposition." Journal of Materials Chemistry C 8.25 (2020): 8457-8465.

Macco, Bart, and W. M. M. Kessels. "Atomic layer deposition of conductive and semiconductive oxides." Applied Physics Reviews 9.4 (2022).

Flexible and Expandable Without Constraints

Thermal-ALD

Precursors and reactants are sequentially introduced into the reaction chamber to facilitate chemical reactions on the target surface, for example, the reaction of TMAl (Trimethylaluminum) with H2O to form AlO. This method is commonly used for typical ALD film layers like AlO, AlN, SiO, SiN, TiO, TiN, ZnO, TaO, HfO, ZrO, and others. The reaction equations are relatively simple, and the resulting film layers are dense. However, it's essential to consider the thermal budget of the deposition target carefully, as the reaction is temperature-dependent.

PEALD

Precursors and plasma-generated free radicals are sequentially introduced into the reaction chamber to facilitate chemical reactions on the target surface, such as the reaction of TMAl with Nitrogen radicals to form AlN. Plasma can dissociate common non-toxic gases like O2 and N2, turning them into active reactants, thereby eliminating the need for controlled gases like NH3 and N2H2. PEALD also offers more flexibility in parameter adjustments, allowing control over properties like the resistivity of TiN, oxygen vacancies in ZnO, film stress, density, and more, through adjustments in plasma parameters.

PEALE

Etching gases and ion bombardment are used sequentially to induce chemical reactions and atomic layer removal on the etching target surface, achieving atomic layer etching. This method can currently be applied to Si and Ge substrates, with etching gases requiring only a 0.95% concentration of Cl2/Ar gas mixture to accomplish the atomic layer etching task.

A-Atomic 2 series Picture＆Produce

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