C-Atomic 8 series

C-Atomic 8 series
Design concepts

As process demands continue to rise, atomic-level processing equipment has become an essential tool. However, the fixed specifications of equipment should not restrict the advancement of science. Surprisingly, the C-Atomic series can execute advanced processes such as Thermal-ALD, PEALD, PEALE, ALA, and more. Following your dreams, Atomic Refining has expanded the versatility of the equipment, enabling the C-Atomic series atomic layer deposition equipment to accomplish various advanced tasks. While the C-Atomic series offers a high degree of adaptability, its performance and stability are not compromised. Adhering to the principles of atomic layer deposition system design, it assists users in completing their missions. Specifically developed for academic research institutions or research and development units, it is positioned as a product that is simple, stable, and highly reproducible. The C-Atomic series will become your best research and development partner.

Technical Specifications and Pricing

A2 Specifications and price

Clean, cost-effective, and efficient precursor delivery

Independent Channels

Each precursor has its own independent channel with fast valves, mass-flow controllers, and piping to prevent cross-contamination and piping blockages, ensuring precise dosing.

Universal Gas Manifold

The gas manifold design is versatile and can accommodate both high vapor pressure Type I and low vapor pressure Type Y precursor containers, allowing for pipeline configuration adjustments to meet different process requirements.

Rapid Response

By reducing the total gas pipeline length and minimizing residue within the pipeline during a half cycle, the system prevents residual precursors from undergoing CVD reactions. This design also enhances the pressure response rate within the reaction chamber during gas introduction.

Ultra-fast Diaphragm Valve

Long cycle life under high-speed actuation
Quick response capable of valve opening or closing time of less than 5 ms Thermal model extends actuator life for thermal application
Cobalt alloy diaphragm to provide high strength and corrosion resistance to ensure long cycle life
High-purity grade PFA seat with broad range of chemical compatibility
Cv consistency from valve to valve: ±3%
Contained seat to provide excellent resistance to swelling & contamination
Minimum particle generation and dead space facilitate purging
Suitable for ultra high purity applications

Stable and Reliable Optional Precursor Modules

Temperature-Controlled Reservoir Module

Improved stability in precursor delivery
No vapor pressure variations due to liquid level fluctuations

Liquid Level Sensing Module

Provides a more intuitive and real-time understanding of the remaining liquid volume

Pressure Gauge Module

Allows for a more intuitive and real-time understanding of the vapor pressure

Remote Plasma Source

For high-quality thin film applications such as passivation layers, gate dielectrics, and insulators, the A2 series offers the option to upgrade from the standard ICP (Inductively Coupled Plasma) source to the HCD (Hollow-Cathode Discharge) module, which provides higher free radical concentrations, faster film deposition, and fewer film defects. Taking the example of an Al2O3 standard film layer, the film quality achieved through this HCD technology surpasses that of the ICP method. XPS (X-ray Photoelectron Spectroscopy) analysis reveals a significant reduction in non-lattice oxygen composition. This leads to advantages such as reduced leakage current and enhanced LED efficiency. In process results for GPC (Gas Phase Cleaning), U% (Uniformity Percentage), and MSE (Material Selectivity Efficiency), the HCD module outperforms the ICP. It is evident that the HCD module can supply oxygen radicals for an 8-inch area, making it fully capable of handling the 2-inch area of the A2 series.

High-Temperature Precursor Solution

Through a high-temperature dual-valve quantitative module, the application temperature of the precursor can be raised from 200°C to 300°C and even up to 600°C, while achieving precise precursor quantification. The concept involves opening V1 to fill the space between the valves with precursor vapor, then closing V1, and subsequently opening V2 to allow all the precursor vapor within the space to flow into the reaction chamber. This method enables accurate quantification of the precursor introduced into the reaction chamber and surpasses the 200°C threshold that most brands' rapid valves cannot exceed.

Diverse Film Layer Combinations

With up to four precursor modules, you can easily address various film engineering requirements such as regular, super-cycles, co-dosing, etc. For example, in the development of HEMT (High Electron Mobility Transistor), you can use multiple precursors like TMAl, TMGa/TEGa, N2H4, BDEAS to stack film layers like AlN, GaN, AlGaN, SiN, and more.

Rouf, Polla, et al. "Epitaxial GaN using Ga (NMe2)3 and NH3 plasma by atomic layer deposition." Journal of Materials Chemistry C 8.25 (2020): 8457-8465.

Macco, Bart, and W. M. M. Kessels. "Atomic layer deposition of conductive and semiconductive oxides." Applied Physics Reviews 9.4 (2022).

C-Atomic 8 series Picture＆Produce

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